Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US6087064A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.