Method to improve commercial bonded SOI material
US6087242A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Feb 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.