Method of forming trench isolation with high integrity, ultra thin gate oxide
US6087243A · kind A · utility
55Cited by
8References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 21, 1997 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Oct 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The quality of an ultra thin gate oxide film, particularly at the edges of a shallow trench isolation structure, is improved employing a double sacrificial oxide technique. After trench filling and planarization, the pad oxide layer thickness is increased during trench fill densification in an oxidizing atmosphere. The pad oxide is then removed exposing the substrate surface and trench edges. A second sacrificial oxide is formed consuming part of the substrate surface. The second sacrificial oxide is then removed along with defects in the substrate surface prior to gate oxide and gate electrode formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.