Charged-particle-beam (CPB) lithography apparatus, evaluation method, and CPB source
US6087667A · kind A · utility
43Cited by
3References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Charged-particle-beam (CPB) lithography apparatus are disclosed that provide high accuracy in forming, by projection exposure using a charged particle beam, a pattern on a sensitive substrate at high throughput. The apparatus comprise a cathode having a work function of 2.65 eV or less within a space-charge limitation region. The temperature of the cathode is controlled within a range of 1,200 to 1,400.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.