Structures for reduced topography capacitors
US6088258A · kind A · utility
8Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | May 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A planarized interleaved capacitor for use with a substrate. The capacitor has a plurality of planarized metal layers formed above the substrate, at least one dielectric layer disposed between the plurality of planarized metal layers, and at least one insulator layer disposed over one of the plurality of metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.