Ion-implantation assisted wet chemical etching of III-V nitrides and alloys
US6090300A · kind A · utility
6Cited by
15References
21Claims
0Family size
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Key dates
| Filing date | May 26, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | May 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.