Conditioning of dielectric materials
US6090723A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Feb 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for conditioning a dielectric material on a semiconductor substrate structure during a semiconductor fabrication process, comprising the steps of: irradiating the dielectric material using ultraviolet light irradiation while in a ambient exhibiting the properties of self-limiting oxidation, during a first annealing period; following the first annealing period by exposing the dielectric material to an oxygen ambient during a second annealing period. This method may be applied to the conditioning of a capacitor dielectric on a capacitor structure, or to the conditioning of a field effect transistor gate dielectric on a field effect transistor gate structure or to the conditioning of insulative spacers about the sidewalls of a field effect transistor gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.