MOSFET device having recessed gate-drain shield and method
US6091110A · kind A · utility
41Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1999 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Oct 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.