Method of sensing data in semiconductor memory device
US6091653A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1999 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Aug 17, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2281
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of sensing data in a semiconductor device. First, an equalizing instructing signal is provided to stop precharging and equalizing the bit line pair while in a reading state. Then a wordline is selected to transmit the data in a memory cell to one of the pair of bit lines for obtaining a potential difference between the bit line pair. A sensing enable signal is subsequently provided to activate the shared sense amplifier for sensing and amplifying the data. And a potential level of the selecting control signal is boosted to a boosted potential level to restore and read the data by delaying a predetermined period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.