Semiconductor device and its fabricating method
US6093243A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1997 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Oct 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.