Method of making IC devices having stable CVD titanium nitride films
US6096645A · kind A · utility
4Cited by
5References
4Claims
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Key dates
| Filing date | Mar 4, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Mar 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.