Patent · US Expired

Non-contact tunnelling field measurement for a semiconductor oxide layer

US6097196A · kind A · utility

83Cited by

3References

4Claims

0Family size

Inventors

Roger L. Verkuil · Poughkeepsie, US
Gregory S. Horner · Santa Clara, US
Tom Miller · Portland, US

Key dates

Filing date	Apr 23, 1997
Grant date	Aug 1, 2000
Priority date	—
Expiry date	Apr 23, 2017

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/2648
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.