Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US6099604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1997 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Aug 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.