Silicon wafer etching method and silicon wafer etchant
US6099748A · kind A · utility
7Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Dec 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a silicon wafer etching method in which etching is performed through use of an etchant. The etchant is an alkali aqueous solution which contains an alkali component in a concentration ranging from 50.6% to 55.0% by weight. The alkali component is preferably sodium hydroxide. The silicon wafer etching method can reduce not only surface roughness but also dispersion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.