Method of deforming a trench by a thermal treatment
US6100132A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
Abstract
A semiconductor device includes a semiconductor substrate having a trench on a surface thereof and an embedding member embedding the interior of the trench therewith. While the section of the trench when cut by a first plane perpendicular to the direction of the depth of the trench is defined as a first section and the section of the trench when cut by a second plane perpendicular to the direction of the depth of the trench and closer to the bottom of the trench than the first plane is defined as a second section, the area of the first section is smaller than that of the second section and a minimum radius of curvature of the first section is smaller than a minimum radius of curvature of the second section. As a result, it is possible to lessen the concentration of the electric field into the bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.