Sputtering process for the conformal deposition of a metallization or insulating layer
US6100200A · kind A · utility
76Cited by
23References
50Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.