Method of making ultra thin gate oxide using aluminum oxide
US6100204A · kind A · utility
22Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor and a method of making the same are provided. The method includes the step of forming a gate dielectric layer on the substrate where the gate dielectric layer is composed of an aluminum oxide containing material. A gate electrode is formed on the gate dielectric layer and first and second source/drain regions are formed in the substrate laterally separated to define a channel region beneath the gate electrode. The aluminum oxide containing material may be, for example, Al.sub.2 O.sub.3. Aluminum oxide provides for a gate dielectric with a thin equivalent thickness of oxide in a potentially single crystal form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.