Triple well charge pump
US6100557A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 1997 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | May 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved charge pump design is disclosed. This charge pump comprises at least one pumping transistor having a triple well arrangement. This triple pump transistor has a source and a drain region of a first conductive type formed on a first well having an opposite conductive type. A second well having the first conductive type is formed outside of the first well. The source region, first well and second well are set to substantially the same potential. One aspect of this configuration is that the first well forms a semiconductor diode with the drain region. Another aspect of this arrangement is that the body effect of the transistor is reduced. The reduction in body effect reduces the threshold voltage of the transistor. It is found that the above mentioned diode and threshold voltage reduction, singly and in combination, allow the charge pump to operate more efficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.