Plasma processing system and method
US6101972A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jan 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3142
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on a substrate holder in the chamber. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.