Apparatus and method for the electrochemical etching of a wafer
US6103096A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67075
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrochemical etching apparatus and method increasing the rate at which material is removed from a substrate such as a metallic surface. The apparatus includes an electrolyte delivery system positioned below and centered beneath the center of the substrate (e.g., a wafer) to be etched so that the center axis of the delivery system corresponds to the center of the wafer. The electrolyte delivery system and the wafer are then rotated relative to each other as the electrolyte is discharged from the delivery system and toward the surface of the wafer. A corresponding method for electrochemically etching a surface of the wafer with an electrolyte is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.