Method and system for providing a contact on a semiconductor device
US6103593A · kind A · utility
3Cited by
5References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for providing at least one contact on a semiconductor is disclosed. The semiconductor includes a plurality of isolation structures. The method and system include providing an etch-stop layer in direct contact with the semiconductor, providing a dielectric layer over the etch-stop layer, and etching through the dielectric layer and a portion of the etch-stop layer. A portion of the semiconductor in proximity with one of the plurality of isolation structures is not exposed during the etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.