Method and apparatus for improving film stability of halogen-doped silicon oxide films
US6103601A · kind A · utility
46Cited by
24References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jun 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.