Semiconductor laser and process for producing the same
US6104738A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Nov 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1<W2, and the stripe width is continuously reduced from W2 to W1 along the cavity length direction. Thus, a semiconductor laser device is provided which has a very narrow beam divergence and a low threshold current and generates a high optical output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.