Reactor useful for chemical vapor deposition of titanium nitride
US6106625A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow. An edge ring assembly is positioned in a peripheral recess at the top of heater pedestal supporting the wafer next to the processing region. The showerhead is insulated from the chamber body by an isolator having a downwardly sloping lower surface facing the processing region. Thereby, the i…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.