Patent · US Expired

Nano-porous copolymer films having low dielectric constants

US6107184A · kind A · utility

33Cited by
19References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 9, 1998
Grant dateAug 22, 2000
Priority date
Expiry dateDec 9, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/958
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.