High planarity high-density in-laid metallization patterns by damascene-CMP processing
US6107186A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Erosion of high density metallization areas associated with conventional damascene-CMP processing is avoided and greater planarity achieved by selectively increasing the metal overburden layer thickness at high density metallization regions. Embodiments include initially filling recesses formed in the substrate surface with a metal forming a blanket or overburden layer of the metal thereon. Regions of the blanket or overburden layer overlying regions of high density metallization are selectively electroplated to a greater thickness. The surface is then planarized by CMP, with the selectively increased thickness areas of the overburden layer compensating for greater erosion rates thereat during CMP, thereby resulting in greater planarity of the polished surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.