Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
US6107688A · kind A · utility
2Cited by
26References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1999 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Apr 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is forced by introducing hydrogen gas and oxygen gas along with aragon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.