Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon
US6109775A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1997 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Sep 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is the formation of additional lines, either dummy lines or active lines, in an electrically conductive pattern of lines to provide more uniform loading for either etching or chemical/mechanical polishing of a layer of electrically conductive material from which the pattern of lines is formed. Also disclosed is the use of additional or dummy vias to balance the loading during etching of the vias, as well as to provide stress relief for underlying metal in regions or areas having a low density of vias. Further disclosed is the use of a working grid on the integrated circuit structure to analyze the spacing of lines or vias for the above effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.