Method of forming metal films on a substrate by chemical vapor deposition
US6110529A · kind A · utility
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0464
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula: EQU MA.sub.Y X wherein: PA1 M is a y-valent metal; PA1 A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X; PA1 y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and PA1 X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.