Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6110531A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1997 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jul 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.