Photoresists which are suitable for producing sub-micron size structures

US6110637A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Recai Sezi · Simmerath, DE
• Rainer Leuschner · Regensburg, DE
• Horst Borndoerfer · Erlangen, DE
• Michael Sebald · Waischenfeld, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE

Key dates

• Filing date: Feb 9, 1995
• Grant date: Aug 29, 2000
• Expiry date: Feb 9, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/111
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photoresist suitable for the production of structures in the submicron range contains the following components: PA1 a polymer component with carboxylic acid anhydride functions and carboxylic acid tert. butyl ester groups PA1 a photoinitiator which releases an acid when exposed and PA1 a suitable solvent.