Method of integration of nitrogen bearing high K film
US6110784A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02192
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor and a method of making the same are provided. The transistor includes a substrate that has an upper surface and a gate dielectric layer positioned on the substrate that has a first quantity of nitrogen therein. A gate electrode is positioned on the gate dielectric layer. First and second source/drain regions are positioned in the substrate and laterally separated to define a channel region beneath the gate dielectric layer. The gate dielectric layer may be composed of a high K material with a thin equivalent thickness of oxide, such as TiO.sub.2, Ta.sub.2 O.sub.5, CrO.sub.2 or SrO.sub.2. The nitrogen suppresses later oxide formation which may otherwise increase the equivalent thickness of oxide of the gate dielectric layer. Nitrogen may also be incorporated into the substrate and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.