In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
US6110828A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1996 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Dec 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides a method of forming a structure having a selective CVD metal plug with a continuous barrier layer formed thereon. More particularly, the present invention applies a thin layer of warm PVD metal over a selective CVD metal plug and adjacent nodules on the dielectric field to planarize the metal surface. A barrier is then deposited over the planarized metal surface. Therefore, the invention provides the advantages of having (1) void-free, sub-half micron selective CVD metal via plugs and interconnects, and (2) a reduced number of process steps without the use of CMP, and (3) barrier layers over the metal plugs to improve the electromigration resistance of the metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.