Degassing method and apparatus
US6113698A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1997 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for clamping and heating a wafer without using moving parts and without exposing the wafer to external stress is provided. A high backside wafer pressure which provides efficient heat transfer from a heated substrate support to the wafer is offset by a high frontside wafer pressure higher than or lower than the backside wafer pressure. The high frontside pressure reduces wafer stress by providing a uniform frontside/backside pressure and presses the wafer against the heated substrate support. A continuous gas purge for providing a viscous flow across the wafer to carry away desorbed contaminants, and frontside heating elements for improving desorption are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.