Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6114258A · kind A · utility
60Cited by
12References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Oct 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.