Method for constructing ferroelectric based capacitor for use in memory systems
US6117688A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.