Method for etching silicon dioxide using fluorocarbon gas chemistry
US6117786A · kind A · utility
32Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | May 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing process wherein deep and narrow 0.6 micron and smaller openings are plasma etched in doped and undoped silicon oxide. The etching gas includes fluorocarbon, oxygen and nitrogen reactants which cooperate to etch the silicon oxide while providing enough polymer build-up to obtain anisotropically etched openings and avoid etch stop of etched openings having aspect ratios of 5:1 and higher. The process is useful for etching 0.25 micron and smaller contact or via openings and can be carried out in a parallel plate plasma reactor having a showerhead electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.