Semiconductor device and method of manufacturing the same
US6118152A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Oct 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon layer provided in a silicon substrate through a buried oxide film includes a silicon island partitioned by a trench. A surface of the silicon island in the trench is covered with a side wall oxide film, and LDMOS transistors are formed in the trench. A first impurity-doped polysilicon layer for applying a substrate potential is disposed between the buried oxide film and the substrate, and a second impurity-doped polysilicon layer is buried in the trench to communicate with the first impurity-doped polysilicon layer. Further, electrodes for applying the substrate potential are disposed on the second impurity-doped polysilicon layer. Accordingly, the substrate potential can be readily applied from the surface of the silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.