Method of processing wafers with low mass support
US6121061A · kind A · utility
474Cited by
49References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Nov 2, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.