Method to form hemi-spherical grain (HSG) silicon
US6121081A · kind A · utility
18Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525.degree. C.; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.
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