Isolation using an antireflective coating
US6121133A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion ba…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.