Zhiping Yin
102Patents
21h-index
52Co-inventors
93Inventor score
Filing activity: Aug 22, 1997 → Feb 18, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6316285A | Passivation layer for packaged integrated circuits | Electricity | 192 | Expired |
| US6515355B1 | Passivation layer for packaged integrated circuits | Electricity | 160 | Expired |
| US7253118B2 | Pitch reduced patterns relative to photolithography features | Electricity | 117 | Expired |
| US6156674A | Semiconductor processing methods of forming insulative materials | Electricity | 83 | Expired |
| US6670284B2 | Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures | Emerging Cross-Sectional Technologies | 64 | Expired |
| US7576441B2 | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device | Electricity | 64 | Active |
| US6281100A | Semiconductor processing methods | Electricity | 40 | Expired |
| US6121133A | Isolation using an antireflective coating | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6380611B1 | Treatment for film surface to reduce photo footing | Electricity | 37 | Expired |
| US6150257A | Plasma treatment of an interconnect surface during formation of an interlayer dielectric | Electricity | 36 | Expired |
| US6939794B2 | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device | Electricity | 36 | Expired |
| US7924333B2 | Method and apparatus providing shared pixel straight gate architecture | Electricity | 34 | Active |
| US6461970B1 | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby | Emerging Cross-Sectional Technologies | 34 | Expired |
| US7651951B2 | Pitch reduced patterns relative to photolithography features | Electricity | 32 | Active |
| US6291363A | Surface treatment of DARC films to reduce defects in subsequent cap layers | Electricity | 30 | Expired |
| US6274292A | Semiconductor processing methods | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6294459A | Anti-reflective coatings and methods for forming and using same | Electricity | 28 | Expired |
| US6174590A | Isolation using an antireflective coating | Emerging Cross-Sectional Technologies | 26 | Expired |
| US7105431B2 | Masking methods | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6174816A | Treatment for film surface to reduce photo footing | Electricity | 23 | Expired |
| US7175944B2 | Prevention of photoresist scumming | Physics | 23 | Expired |
| US6423582B1 | Use of DAR coating to modulate the efficiency of laser fuse blows | Electricity | 21 | Expired |
| US6573175B1 | Dry low k film application for interlevel dielectric and method of cleaning etched features | Electricity | 20 | Expired |
| US6444588B1 | Anti-reflective coatings and methods regarding same | Electricity | 17 | Expired |
| US6144083A | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby | Emerging Cross-Sectional Technologies | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.