Techniques for etching with a photoresist mask
US6121154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer 106 is disposed below a photoresist mask 108A. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.