Patent · US Expired

Microfabricated high aspect ratio device with an electrical isolation trench

US6121552A · kind A · utility

85Cited by
32References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 13, 1997
Grant dateSep 19, 2000
Priority date
Expiry dateJun 13, 2017

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P2015/0814
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A microfabricated device having a high vertical aspect ratio and electrical isolation between a structure region and a circuit region. The device may be fabricated on a single substrate and may include electrical interconnections between the structure region and the circuit region. The device includes a substrate and an isolation trench surrounding a structure region in the substrate. The isolation trench includes a lining of a dielectric insulative material. A plurality of electromechanical elements are located in the structure region and are laterally anchored to the isolation trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.