CMOS compatible integrated pressure sensor
US6122975A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor fabricated onto a substrate using conventional CMOS fabrication processes. The pressure sensor is built on a substrate having a first conductivity type and has defined in it a well of an opposite conductivity type. This well defines a membrane. Resistors are diffused into the well. Source/drain regions are provided for leadouts for the resistors. An n-cap is provided for the resistors. Metalization contacts may be provided to connect the membrane to a positive bias during a membrane etching process. A cavity is provided on the underside of the substrate through which pressure is applied to the membrane. Signal conditioning circuitry, such as an operational amplifier, may also be fabricated on the same substrate preferably using the same IC processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.