Patent · US Expired

Method for improving etch uniformity during a wet etching process

US6123865A · kind A · utility

33Cited by
10References
16Claims
0Family size

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Key dates

Filing dateDec 7, 1998
Grant dateSep 26, 2000
Priority date
Expiry dateDec 7, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/32134
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.