Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation
US6124620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | May 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit fabrication process is provided for incorporating barrier atoms, preferably N atoms, within a gate dielectric/silicon-based substrate interfacial region using gas cluster ion beam implantation. Gas cluster ion beam implantation involves supercooling a gas to form clusters of atoms from the molecules in the gas. Those clusters of atoms are then ionized and accelerated to a target. Upon striking the target, the clusters of atoms break up into individual atoms. The energy of the ionized cluster is uniformly distributed to the individual atoms. As such, the atoms have a relatively low energy, and thus may be implanted to a shallow depth of less than 100 .ANG.. Barrier atoms positioned within a gate dielectric/substrate interfacial region serve to inhibit the diffusion of metal atoms and impurities from an overlying gate conductor into the substrate. Furthermore, the barrier layer provides protection against hot carrier injection into and entrapment within the gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.