Row lines of a field emission array and forming pixel openings therethrough
US6124665A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the resent invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array. A second mask is employed to facilitate the removal of passivation material and conductive material from the desired areas of pixel openings. The present invention also includes field emi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.