Ammar Derraa
64Patents
9h-index
7Co-inventors
63Inventor score
Filing activity: Feb 3, 1999 → Mar 30, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7402512B2 | High aspect ratio contact structure with reduced silicon consumption | Electricity | 14 | Expired |
| US6017772A | Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask | Electricity | 13 | Expired |
| US6008063A | Method of fabricating row lines of a field emission array and forming pixel openings therethrough | Electricity | 13 | Expired |
| US6124665A | Row lines of a field emission array and forming pixel openings therethrough | Electricity | 12 | Expired |
| US6696368B2 | Titanium boronitride layer for high aspect ratio semiconductor devices | Electricity | 12 | Expired |
| US6417627B1 | Matrix-addressable display with minimum column-row overlap and maximum metal line-width | Electricity | 11 | Expired |
| US6888252B2 | Method of forming a conductive contact | Electricity | 9 | Expired |
| US6657376B1 | Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon | Electricity | 9 | Expired |
| US6746952B2 | Diffusion barrier layer for semiconductor wafer fabrication | Electricity | 9 | Expired |
| US6059625A | Method of fabricating field emission arrays employing a hard mask to define column lines | Electricity | 9 | Expired |
| US6133057A | Method of fabricating field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors | Electricity | 8 | Expired |
| US6461211B2 | Method of forming resistor with adhesion layer for electron emission device | Electricity | 8 | Expired |
| US6908849B2 | High aspect ratio contact structure with reduced silicon consumption | Electricity | 7 | Expired |
| US6734051B2 | Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates | Chemistry; Metallurgy | 6 | Expired |
| US6329744A | Method of fabricating field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors | Electricity | 6 | Expired |
| US6197607A | Method of fabricating field emission arrays to optimize the size of grid openings and to minimize the occurrence of electrical shorts | Electricity | 6 | Expired |
| US6121722A | Method of fabricating row lines of a field emission array and forming pixel openings therethrough | Electricity | 5 | Expired |
| US6369497B1 | Method of fabricating row lines of a field emission array and forming pixel openings therethrough by employing two masks | Electricity | 5 | Expired |
| US6276982A | Method of fabricating field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors | Electricity | 4 | Expired |
| US6858904B2 | High aspect ratio contact structure with reduced silicon consumption | Electricity | 4 | Expired |
| US6443788B2 | Method of fabricating row lines of a field emission array and forming pixel openings therethrough by employing two masks | Electricity | 4 | Expired |
| US6586285B1 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers | Chemistry; Metallurgy | 4 | Expired |
| US6552478B2 | Field emission arrays employing a hard mask to define column lines and another mask to define emitter tips and resistors | Electricity | 4 | Expired |
| US6210985A | Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask | Electricity | 3 | Expired |
| US6650043B1 | Multilayer conductor structure for use in field emission display | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.