Method and apparatus for depositing an etch stop layer
US6127262A · kind A · utility
38Cited by
23References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 1997 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | May 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.